Please use this identifier to cite or link to this item: https://hdl.handle.net/10316/4321
Title: The oxidation behaviour of mixed tungsten silicon sputtered coatings
Authors: Louro, C. 
Cavaleiro, A. 
Keywords: Oxidation resistance; Suicides; W-Si-N films; Tungsten silicide; Sputtering
Issue Date: 1999
Citation: Thin Solid Films. 343-344:(1999) 51-56
Abstract: W-Si-N coatings were deposited by sputtering and their chemical composition, structure, thermal and oxidation behaviour were characterised. Si-containing films are essentially amorphous. W69Si31 film crystallises at 750 °C as [alpha]-W and W5Si3 phases whereas no significant structural transformations were observed for W24Si21N55 film up to 1000 °C, In both cases elemental diffusion (Si and N) for the substrate was detected after thermal annealing. These coatings present much better oxidation resistance than W and W45N55 coatings.
URI: https://hdl.handle.net/10316/4321
DOI: 10.1016/S0040-6090(98)01568-5
Rights: openAccess
Appears in Collections:FCTUC Eng.Mecânica - Artigos em Revistas Internacionais

Files in This Item:
File Description SizeFormat
file12576a12fdd34f76be1ac1563dad96cd.pdf472.85 kBAdobe PDFView/Open
Show full item record

SCOPUSTM   
Citations

12
checked on Oct 28, 2024

WEB OF SCIENCETM
Citations

17
checked on Nov 2, 2024

Page view(s) 50

392
checked on Nov 6, 2024

Download(s)

343
checked on Nov 6, 2024

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.